switchmode series npn silicon power transistor . . . designed for high current, high speed, high power applications. ? high dc current gain; h fe min. = 20 at i c = 6 a ? low v ce(sat) , v ce(sat) max. = 0.6 v at i c = 6 a ? very fast switching times: t f max. = 0.8 m s at i c = 12 a ??????????????????????? ??????????????????????? maximum ratings ???????????? ???????????? rating ????? ????? symbol ?????? ?????? value ??? ??? unit ???????????? ???????????? collectoremitter voltage ????? ????? v ceo(sus) ?????? ?????? 200 ??? ??? vdc ???????????? ???????????? collectorbase voltage ????? ????? v cbo ?????? ?????? 250 ??? ??? vdc ???????????? ???????????? emitterbase voltage ????? ????? v ebo ?????? ?????? 7 ??? ??? vdc ???????????? ???????????? collectoremitter voltage (v be = 1.5 v) ????? ????? v cex ?????? ?????? 250 ??? ??? vdc ???????????? ???????????? collectoremitter voltage (r be = 100 w ) ????? ????? v cer ?????? ?????? 240 ??? ??? vdc ???????????? ???????????? collectorcurrente continuous e peak (pw 10 ms) ????? ????? i c i cm ?????? ?????? 20 25 ??? ??? adc apk ???????????? ???????????? basecurrent continuous ????? ????? i b ?????? ?????? 4 ??? ??? adc ???????????? ???????????? total power dissipation @ t c = 25 c ????? ????? p d ?????? ?????? 150 ??? ??? watts ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ????? ? ??? ? ????? t j , t stg ?????? ? ???? ? ?????? 65 to 200 ??? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ????? ????? q jc ?????? ?????? 1.17 ??? ??? c/w 1.0 figure 1. power derating t c , temperature ( c) 0 40 80 120 160 200 0.6 0.4 0.2 0.8 derating factor on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 9 1 publication order number: buv11/d buv11 case 107 to204aa (to3) 20 amperes npn silicon power metal transistor 200 volts 150 watts
buv11 http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????????? ??????????????????????? characteristic ???? ???? symbol ???? ???? min ??? ??? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ??????????????????????? ? ????????????????????? ? ??????????????????????? collectoremitter sustaining voltage (i c = 200 ma, i b = 0, l = 25 mh) ???? ? ?? ? ???? v ceo(sus) ???? ? ?? ? ???? 200 ??? ? ? ? ??? ??? ? ? ? ??? vdc ??????????????????????? ? ????????????????????? ? ??????????????????????? collector cutoff current at reverse bias (v ce = 250 v, v be = 1.5 v) (v ce = 250 v, v be = 1.5 v, t c = 125 c) ???? ? ?? ? ???? i cex ???? ? ?? ? ???? ??? ? ? ? ??? 1.5 6 ??? ? ? ? ??? madc ??????????????????????? ? ????????????????????? ? ??????????????????????? collectoremitter cutoff current (v ce = 160 v) ???? ? ?? ? ???? i ceo ???? ? ?? ? ???? ??? ? ? ? ??? 1.5 ??? ? ? ? ??? madc ??????????????????????? ? ????????????????????? ? ??????????????????????? emitterbase reverse voltage (i e = 50 ma) ???? ? ?? ? ???? v ebo ???? ? ?? ? ???? 7 ??? ? ? ? ??? ??? ? ? ? ??? v ??????????????????????? ??????????????????????? emittercutoff current (v eb = 5 v) ???? ???? i ebo ???? ???? ??? ??? 1.0 ??? ??? madc ????????????????????????????????? ????????????????????????????????? second breakdown ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? second breakdown collector current with base forward biased (v ce = 30 v, t = 1 s) (v ce = 140 v, t = 1 s) ???? ? ?? ? ? ?? ? ???? i s/b ???? ? ?? ? ? ?? ? ???? 5.0 0.15 ??? ? ? ? ? ? ? ??? ??? ? ? ? ? ? ? ??? adc ????????????????????????????????? ????????????????????????????????? on characteristics 1 ??????????????????????? ? ????????????????????? ? ??????????????????????? dc current gain (i c = 6 a, v ce = 2 v) (i c = 12 a, v ce = 4 v) ???? ? ?? ? ???? h fe ???? ? ?? ? ???? 20 10 ??? ? ? ? ??? 60 ??? ? ? ? ??? ??????????????????????? ? ????????????????????? ? ??????????????????????? collectoremitter saturation voltage (i c = 6 a, i b = 0.6 a) (i c = 12 a, i b = 1.5 a) ???? ? ?? ? ???? v ce(sat) ???? ? ?? ? ???? ??? ? ? ? ??? 0.6 1.5 ??? ? ? ? ??? vdc ??????????????????????? ? ????????????????????? ? ??????????????????????? baseemitter saturation voltage (i c = 12 a, i b = 1.5 a) ???? ? ?? ? ???? v be(sat) ???? ? ?? ? ???? ??? ? ? ? ??? 1.5 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????????? ? ????????????????????? ? ??????????????????????? current gain e bandwidth product (v ce = 15 v, i c = 1 a, f = 4 mhz) ???? ? ?? ? ???? f t ???? ? ?? ? ???? 8.0 ??? ? ? ? ??? ??? ? ? ? ??? mhz ????????????????????????????????? ????????????????????????????????? switching characteristics (resistive load) ????????? ????????? turnon time ??????????????? ??????????????? (i 12 a i i 15a ???? ???? t on ???? ???? ??? ??? 0.8 ??? ??? m s ????????? ????????? storage time ??????????????? ??????????????? (i c = 12 a, i b1 = i b2 = 1.5 a, v cc = 150 v , t c = 12.5 w ) ???? ???? t s ???? ???? ??? ??? 1.8 ??? ??? ????????? ????????? fall time ??????????????? ??????????????? v cc = 150 v , t c = 12 . 5 w ) ???? ???? t f ???? ???? ??? ??? 0.4 ??? ??? 1 pulse test: pulse width 300 m s, duty cycle 2%.
buv11 http://onsemi.com 3 1 figure 2. active region safe operating area v ce , collector-emitter voltage (v) 10 1 , collector current (a) i c 20 10 100 200 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 2 is based on t c = 25 c; t j(pk) is variable depending on power level. second breakdown limitations do not derate the same as thermal limitations. at high case temperatures, thermal limitations will reduce the power that can handled to values less than the limitations imposed by second breakdown. 0.1 figure 3. aono voltages i c , collector current (a) 1.2 0.8 v, voltage (v) 2.0 11020 1.6 0.4 0 100 i c /i b = 8 v ce v be 0.1 figure 4. dc current gain i c , collector current (a) 60 40 100 11020 80 20 0 100 v ce = 4 0 figure 5. switching times versus collector current i c , collector current (a) 1.0 0.4 3.0 4812 2.0 0.3 0.2 20 t, time (s) m 16 t s t f t on figure 6. switching times test circuit v cc i b2 i b1 r b r c r c r b : non inductives resistances v cc = 150 v r c = 12.5 w r b = 3.3 w i c /i b = 8 i b1 = i b2
buv11 http://onsemi.com 4 package dimensions case 107 issue z to204aa (to3) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. all rules and notes associated with referenced to-204aa outline shall apply. dim min max min max millimeters inches a 1.550 ref 39.37 ref b --- 1.050 --- 26.67 c 0.250 0.335 6.35 8.51 d 0.038 0.043 0.97 1.09 e 0.055 0.070 1.40 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n --- 0.830 --- 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k t seating plane 2 pl d m q m 0.13 (0.005) y m t m y m 0.13 (0.005) t q y 2 1 u l g b v h on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. buv11/d switchmode is a registered trademark of semiconductor components industries, llc (scillc) north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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